Study on initial growth behavior of RuO2 film grown by pulsed chemical vapor deposition: effects of substrate and reactant feeding time
2012.04
원저자: Jeong Hwan Han | American Chemical Society
Controlling the initial growth behavior of SrTiO 3 films by interposing Al 2 O 3 layers between the film and the Ru substrate
2012
원저자: Woongkyu Lee | Royal Society of Chemistry
Electrical properties of TiO2-based MIM capacitors deposited by TiCl4 and TTIP based atomic layer deposition processes
2011.07
원저자: Boris Hudec | Elsevier
The mechanism for the suppression of leakage current in high dielectric TiO2 thin films by adopting ultra-thin HfO2 films for memory application
원저자: Minha Seo | AIP
Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO2 film as bottom electrode
원저자: Jeong Hwan Han | AIP Publishing