Analysis of Channel Potential Recovery According to the Back Pattern in 3D NAND Flash Memory
Gyunseok Ryu, Hyunju Kim, Jihwan Lee, Myounggon Kang
Applied Sciences, 2023
44
Inhibited Channel Potential of 3D NAND Flash Memory String According to Transient Time
Taeyoung Cho, Hyunju Kim, Myounggon Kang
Applied Sciences, 2023
45
Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WOX/TaN Memristors
Youngboo Cho, Jihyung Kim, Myounggon Kang, Sungjun Kim
Materials, 2023
46
Mimicking biological synapses with a-HfSiOx-based memristor: implications for artificial intelligence and memory applications
Muhammad Ismail, Maria Rasheed, Chandreswar Mahata, Myounggon Kang, Sungjun Kim
Nano Convergence, 2023
47
Unveiling the Potential of HfO<sub>2</sub>/WS<sub>2</sub> Bilayer Films: Robust Analog Switching and Synaptic Emulation for Advanced Memory and Neuromorphic Computing
Muhammad Ismail, Maria Rasheed, Sunghun Kim, Chandreswar Mahata, Myounggon Kang, Sungjun Kim
ACS Materials Letters, 2023
48
SnO2-Based Memory Device with Filamentary Switching Mechanism for Advanced Data Storage and Computing
Muhammad Ismail, Chandreswar Mahata, Myounggon Kang, Sungjun Kim
Nanomaterials, 2023
49
3D NAND Flash Memory의 Remnant Polarization(Pr)과 Saturated Polarization(Ps)에 따른 Retention 특성 분석
강명곤, 이재우
j.inst.Korean.electr.electron.eng., 2022
50
Fowler–Nordheim Stress-Induced Degradation of Buried-Channel-Array Transistors in DRAM Cell for Cryogenic Memory Applications
Sungju Choi, Ga Won Yang, Sangwon Lee, Jingyu Park, Changwook Kim, Jun Park, Hyun-Seok Choi, Namhyun Lee, Gang-Jun Kim, Yoon Kim, Myounggon Kang, Changhyun Kim, Jong‐Ho Bae, Dae Hwan Kim