Forming-Free Tunable Analog Switching in WOx/TaOx Heterojunction for Emulating Electronic Synapses
Chandreswar Mahata, Juyeong Pyo, Beomki Jeon, Muhammad Ismail, Myounggon Kang, Sungjun Kim
Materials, 2022
52
Optimal Bias Condition of Dummy WL for Sub-Block GIDL Erase Operation in 3D NAND Flash Memory
Beomsu Kim, Myounggon Kang
Electronics, 2022
53
Synaptic plasticity features and neuromorphic system simulation in AlN-based memristor devices
Osung Kwon, Yewon Lee, Myounggon Kang, Sungjun Kim
Journal of Alloys and Compounds, 2022
54
High performance ferroelectric field-effect transistors for large memory-window, high-reliability, high-speed 3D vertical NAND flash memory
Giuk Kim, Sang-Ho Lee, Taehyong Eom, Taeho Kim, Minhyun Jung, Hunbeom Shin, Yeongseok Jeong, Myounggon Kang, Sanghun Jeon
Journal of Materials Chemistry C, 2022
55
Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System
Chandreswar Mahata, Muhammad Ismail, Myounggon Kang, Sungjun Kim
Nanoscale Research Letters, 2022
56
Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering
Muhammad Ismail, Chandreswar Mahata, Myounggon Kang, Sungjun Kim
Nanoscale Research Letters, 2022
57
A Novel Structure to Improve the Erase Speed in 3D NAND Flash Memory to Which a Cell-On-Peri (COP) Structure and a Ferroelectric Memory Device Are Applied
Seonjun Choi, Jae Kyeong Jeong, Myounggon Kang, Yun‐Heub Song
Electronics, 2022
58
Coexistence of non-volatile and volatile characteristics of the Pt/TaOx/TiN device
Seokyeon Yun, Jongmin Park, Myounggon Kang, Sungjun Kim
Results in Physics, 2022
59
CTF-F 구조를 가진 3D NAND Flash Memory에서Gate Controllability 분석
강명곤, 김범수, 이종원
전기전자학회논문지, 2021
60
SPICE를 사용한 3D NAND Flash Memory의 Channel Potential 검증