발행물

논문
저서

전체 논문

233

71

TID Circuit Simulation in Nanowire FETs and Nanosheet FETs
Jongwon Lee, Myounggon Kang
Electronics, 2021

72

Analysis of Circuit Simulation Considering Total Ionizing Dose Effects on FinFET and Nanowire FET
Hyeonjae Won, Myounggon Kang
Applied Sciences, 2021

73

RETRACTED: Kang et al. Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applications. Electronics 2020, 9, 1268
Shinyoung Kang, Juyoung Lee, Myounggon Kang, Yun‐Heub Song
Electronics, 2021

74

The Change of Self-heating according to Bottom Oxide and Package which are based on 3㎚ Multi-nanosheet Field Effect Transistor
Changhyun Yoo, Hyunwoo Kim, Yoongeun Seon, Myounggon Kang, Jongwook Jeon
Journal of the Institute of Electronics and Information Engineers, 2021

75

Semi-Analytical Model of Subthreshold Current for Macaroni Channel MOSFET
Quan Nguyen-Gia, Myounggon Kang, Jongwook Jeon, Hyungcheol Shin
IEEE Silicon Nanoelectronics Workshop, 2021

76

Organizing Committee
Woonseon Cheon, Myounggon Kang, Jeong Eun Lee, Publicity Chair, Registration Chair, Jinyoung Chair, Seokjun Ko
2021 IEEE Region 10 Symposium (TENSYMP), 2021

77

3 nm Node Nanoplate-FET에서 Self-heating Effect의 완화 방법
Hyunwoo Kim, Jongwook Jeon, Myounggon Kang, Hyungcheol Shin
전자공학회논문지, 2020

78

A Novel Structure and Operation Scheme of Vertical Channel NAND Flash with Ferroelectric Memory for Multi String Operations
Seonjun Choi, Changhwan Choi, Jae Kyeong Jeong, Myounggon Kang, Yun‐Heub Song
Electronics, 2020

79

Ferroelectric Polarization Aided Low Voltage Operation of 3D NAND Flash Memories
Ilsik Ham, Young-Seok Jeong, Seung Jae Baik, Myounggon Kang
Electronics, 2020

80

A New Read Scheme for Alleviating Cell-to-Cell Interference in Scaled-Down 3D NAND Flash Memory
Jae‐Min Sim, Myounggon Kang, Yun‐Heub Song
Electronics, 2020