A Novel Program Operation Scheme With Negative Bias in 3-D NAND Flash Memory
Jae-Min Sim, Myounggon Kang, Yun‐Heub Song
IEEE Transactions on Electron Devices, 2021
64
Short-term and long-term synaptic plasticity in Ag/HfO2/SiO2/Si stack by controlling conducting filament strength
Yewon Lee, Chandreswar Mahata, Myounggon Kang, Sungjun Kim
Applied Surface Science, 2021
65
Pulse frequency dependent synaptic characteristics in Ta/SiN/Si memristor device for neuromorphic system
Minsu Park, Myounggon Kang, Sungjun Kim
Journal of Alloys and Compounds, 2021
66
Comparison of synaptic properties considering dopant concentration and device operation polarity in Cu/SiN/SiO2/p-Si devices for neuromorphic system
Osung Kwon, Yoon Kim, Myounggon Kang, Sungjun Kim
Applied Surface Science, 2021
67
Gradual conductance modulation of Ti/WO<i>x</i>/Pt memristor with self-rectification for a neuromorphic system
Jiwoong Shin, Myounggon Kang, Sungjun Kim
Applied Physics Letters, 2021
68
Floating Filler (FF) in an Indium Gallium Zinc Oxide (IGZO) Channel Improves the Erase Performance of Vertical Channel NAND Flash with a Cell-on-Peri (COP) Structure