발행물

전체 논문

233

61

Tapering과 Ferroelectric Polarization에 의한 3D NAND Flash Memory의 Lateral Charge Migration 분석
강명곤, 이재우, 이종원
j.inst.Korean.electr.electron, 2021

62

3nm급 Multi-Nanosheet Field Effect Transistor의 Bottom Oxide 및 Package에 따른 Self-Heating 변화
Yoo Chang Hyun, Hyunwoo Kim, Seon Yoon Geun, Myounggon Kang, Jongwook Jeon
전자공학회논문지, 2021

63

A Novel Program Operation Scheme With Negative Bias in 3-D NAND Flash Memory
Jae-Min Sim, Myounggon Kang, Yun‐Heub Song
IEEE Transactions on Electron Devices, 2021

64

Short-term and long-term synaptic plasticity in Ag/HfO2/SiO2/Si stack by controlling conducting filament strength
Yewon Lee, Chandreswar Mahata, Myounggon Kang, Sungjun Kim
Applied Surface Science, 2021

65

Pulse frequency dependent synaptic characteristics in Ta/SiN/Si memristor device for neuromorphic system
Minsu Park, Myounggon Kang, Sungjun Kim
Journal of Alloys and Compounds, 2021

66

Comparison of synaptic properties considering dopant concentration and device operation polarity in Cu/SiN/SiO2/p-Si devices for neuromorphic system
Osung Kwon, Yoon Kim, Myounggon Kang, Sungjun Kim
Applied Surface Science, 2021

67

Gradual conductance modulation of Ti/WO<i>x</i>/Pt memristor with self-rectification for a neuromorphic system
Jiwoong Shin, Myounggon Kang, Sungjun Kim
Applied Physics Letters, 2021

68

Floating Filler (FF) in an Indium Gallium Zinc Oxide (IGZO) Channel Improves the Erase Performance of Vertical Channel NAND Flash with a Cell-on-Peri (COP) Structure
Seonjun Choi, Changhwan Choi, Jae Kyeong Jeong, Myounggon Kang, Yun‐Heub Song
Electronics, 2021

69

Impact Ionization and Hot-Carrier Degradation in Saddle-Fin and Buried-Gate Transistor of Dynamic Random Access Memory at Cryogenic Temperature
Jun Park, Namhyun Lee, Gang-Jun Kim, Hyun-Seok Choi, Dae Hwan Kim, Changhyun Kim, Myounggon Kang, Yoon Kim
IEEE Electron Device Letters, 2021

70

The Analysis of SEU in Nanowire FETs and Nanosheet FETs
Yun-Jae Kim, Myounggon Kang
Electronics, 2021