Lg = 50 nm Gate-All-Around In0.53Ga0.47As Nanosheet MOSFETs with Regrown In0.53Ga0.47As Contacts
Lee, I.-G, Jo, H.-B, Baek, J.-M, Lee, S.-T, Choi, S.-M, Kim, H.-J, Park, W.-S, Yoo, J.-H, Ko, D.-H, Kim, T.-W, Kim, S.-K, Kim, J.-G, Yun, J, Kim, T, Lee, J.-H, Shin, C.-S, Lee, J.-H, Seo, K.-S, Kim, D.-H
Electronics (Basel), 2022