Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction
김선욱, 변대섭, 장현철, 구상모, 이후정, 고대홍
APPLIED PHYSICS LETTERS, 2014
82
RESET-first unipolar resistance switching behavior in annealed Nb2O5 films
이규민, 김종기, 목인수, 나희도, 고대홍, 손현철, 이성훈, Sinclair, R (Sinclair, Robert
THIN SOLID FILMS, 2014
83
Growth and electrical properties of in situ phosphorus-doped polycrystalline silicon films using Si3H8 and PH3
김병주, 장현철, 김선욱, 변대섭, 구상모, Song, JS, 고대홍
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2014
84
Selective epitaxial growth of compressively strained Ge layers on Si in 40-nm trench arrays
김병주, 김선욱, 장현철, 김정훈, 구상모, 김대현, 민병기, 고대홍
THIN SOLID FILMS, 2014
85
Structural deformation and void formation driven by phase transformation in the Ge2Sb2Te5 film
Park, S.J., Ahn, M., Jeong, K., Jang, M.H., 조만호, Song, J.Y., 고대홍, Ahn, D.-H., Nam, S.-W., Jeong, G.
JOURNAL OF MATERIALS CHEMISTRY C, 2014
86
Effects of nitrogen incorporation in HfO2 grown on InP by atomic layer deposition: An evolution in structural, chemical, and electrical characteristics
강유선, 김대경, 강항규, 정광식, 조만호, 고대홍, 김형섭, 서정혜, 김동찬
ACS APPLIED MATERIALS & INTERFACES, 2014
87
RESET-first bipolar resistive switching due to redox reaction in ALD HfO2 films