발행물
컨퍼런스
The 23rd Korean Conference on Semiconductors
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Influence of O3 treatment on carrier density of two-dimensional electron gas at a-Al2O3/SrTiO3 interface
Decreasing Interfacial Layers of The Ferroelectric Hf0.5Zr0.5O2 Film Capacitors by Wake-Up Effect
Study on the Ferroelectric Domain Switching Kinetics in Dielectric/Ferroelectric Capacitors
Analysis on the Evolution of the Ferroelectricity in Undoped HfO2 Films Prepared by Atomic Layer Deposition
Interface Charge Controlled Negative Capacitance in Dielectric/Ferroelectric Thin Films