2019.07

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Two-Dimensional TMDs/Si Heterojunction Photodetector Fabricated by Atomic-Pressure PECVD under extremely Low Temperature (< 200 °C)

2019.07

,

La-doped Hf0.5Zr0.5O2: a multifaceted material

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Study on the improvement of interfacial properties of ferroelectric Hf0.5Zr0.5O2 thin film deposited by atomic layer deposition with Tetrakis(dimethylamido)hafnium(TDMAH) precursor

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Nucleation-Limited Phase Transformation in Ferroelectric Hf0.5Zr0.5O2 ThinFilms

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Quasi-static Negative Capacitance in Ferroelectric Thin Film by Phase Field Simulation Approach