발행물
컨퍼런스
ISAF/ECAPD/PFM Conference 2016
,
Ferroelectric Engineered HfO2 thin film prepared by low temperature atomic layer deposition
Two-step polarization switching mediated by a nonpolar intermediate phase in Hf0.4Zr0.6O2 thin films
Negative capacitance: theory, practice and limitations
ALD2016
2016
Impact of ALD processing on non-volatile memory performance of ferroelectric HfO2 based capacitors
KJC-FE11
Preparation and characterization of ferroelectric Hf0.5Zr0.5O2 films by RF-sputtering method