,

Study on ferroelectric switching kinetics affected by wake up effect in Hf0.5Zr0.5O2 films

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Ferroelectric to antiferroelectric transition in Hf0.5Zr0.5O2 thin films induced by deposition temperature control during atomic layer deposition

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Optimization of dielectric and ferroelectric properties in Hf1-xZrxO2 films for non-volatile ferroelectric memory applications

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Current understanding of ferroelectricity and field‐induced ferroelectricity in (Hf,Zr)O2 films based on first order phase transition theory

1970

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Phase Transition and Related Energy Applications of (Hf,Zr)O2 Films