발행물
컨퍼런스
IEFM 2015 1st International Symposium on Emerging Functional Materials
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Analysis on the wake-up behavior of ferroelectric Hf0.5Zr0.5O2 films by pulse-switching measurement
Evolution of the Ferroelectricity in undoped HfO2 films through Deposition Temperature Control during Atomic Layer Deposition
ALD 2015
Ferroelectric HfO2 for Novel Semiconductor Devices
ISAF-ISIF-PFM-2015
Toward a multifunctional monolithic device based on pyroelectricity and the electrocaloric effect of thin antiferroelectric HfxZr1-xO2 films
KJC-FE11, Sungkyunkwan University, Seoul, Korea
Study on ferroelectric switching kinetics affected by wake up effect in Hf0.5Zr0.5O2 films