발행물
컨퍼런스
KJC-FE11, Sungkyunkwan University, Seoul, Korea
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Ferroelectric to antiferroelectric transition in Hf0.5Zr0.5O2 thin films induced by deposition temperature control during atomic layer deposition
19th Workshop on Dielectrics in Microelectronics, Catania, Italy
Optimization of dielectric and ferroelectric properties in Hf1-xZrxO2 films for non-volatile ferroelectric memory applications
Novel High-k workshop, Technical University Dresden
Current understanding of ferroelectricity and field‐induced ferroelectricity in (Hf,Zr)O2 films based on first order phase transition theory
IEFM 2015 1st International Symposium on Emerging Functional Materials, Songdo, Incheon, Korea
Analysis on the wake-up behavior of ferroelectric Hf0.5Zr0.5O2 films by pulse-switching measurement
Evolution of the Ferroelectricity in undoped HfO2 films through Deposition Temperature Control during Atomic Layer Deposition