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Transient Negative Capacitance in Domain Wall of Ferroelectric Thin Films

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Examination on the ferroelectricity in HfxZr1-xO2 thin film

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Diode-Embedded Resistive Memory Using Stacked Ferroelectric/Dielectric Layer

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Novel tri-states memory using ferroelectric-insulator-semiconductor hetero-junctions for fifty percent increased data storage

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Direct observation of transient negative capacitance in domain wall of ferroelectric thin films