발행물
컨퍼런스
ALD 2015, Hilton Hotel, Portland, USA
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Ferroelectric HfO2 for Novel Semiconductor Devices
ISAF-ISIF-PFM-2015, Singapore
Toward a multifunctional monolithic device based on pyroelectricity and the electrocaloric effect of thin antiferroelectric HfxZr1-xO2 films
Carrier density control of 2-dimensional electron gas at a-Al2O3/SrTiO3 interface by ALD using O3 treatment
The Ferroelectric and Antiferroelectric Properties of HfO2/ZrO2 Nanolaminate Systems
An analysis for the wake-up phenomenon of ferroelectric Hf0.5Zr0.5O2 thin films by transient switching current