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Thin HfxZr1-xO2 Films (x=0.1-0.4) for a Monolithic Device for Various Energy-related Applications

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Ferroelectric Hf0.5Zr0.5O2 Thin Films with Al2O3 inter-layer as a Serial Resistor on Ferroelectric Switching

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A New Approach to the Negative Capacitance of Ferroelectric Thin Films

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Study on the wake-up phenomenon of ferroelectric Hf0.5Zr0.5O2 thin films by polarization switching and discharge behavior

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Antiferroelectric HfxZr1-xO2 thin films for the energy-related applications