,

Transient Negative Capacitance in switching domain of ferroelectric thin films

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Examination on the ferroelectricity in HfxZr1-xO2 thin film

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Transient Negative Capacitance in Domain Wall of Ferroelectric Thin Films

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Effect of Composition on the ferroelectric properties of HfxZr1-xO2 thin film

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Novel tri-states memory using ferroelectric-insulator-semiconductor hetero-junctions for fifty percent increased data storage