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The Effects of Evolution of Phases and Forming Gas Annealing on Ferroeletric Properties of Thin Hf0.5Zr0.5O2 Films

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Grain size engineering for ferroelectric (Hf,Zr)O2 films by insertion of thin Al2O3 layer

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The origin of the ferroelectricity in thin Hf1-xZrxO2 films: microstructure and in-plane tensile stress formed during island coalescence

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Evolution of Phases and Ferroelectric Properties of Thin Hfo.sZrO.502 Films According to the Thickness and Annealing Temperature

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Stabilization of Negative Capacitance in Ferroelectric Thin Films