Ultrathin metal films with low resistivity via atomic layer deposition: Process pressure effect on initial growth behavior of Ru films
Chemistry of Materials, 2024
2
Superior and stable ferroelectric properties of hafnium-zirconium-oxide thin films deposited via atomic layer deposition using cyclopentadienyl-based precursors without annealing
Effects of plasma conditions on sulfurization of MoO3 thin films and surface evolution for formation of MoS2 at low temperature
Jeong-Hun Choi, Seung Won Lee, Hyo-Bae Kim, Ji-Hoon Ahn*
Applied Surface Science, 2020
9
Growth characteristics of tin sulphides crystals by vapor transport method using SnS and sulphur powder: effect of temperature and pressure
Chaeeun Kim, Jun-Cheol Park, Ji-Hoon Ahn*
Micro & Nano Letters, 2020
10
Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
Eun-Jin Song, Hyunjin Jo, Se-Hun Kwon*, Ji-Hoon Ahn*, Jung-Dae Kwon*