Pulse program for improving learning accuracy and reducing programming energy consumption of ferroelectric synaptic transistor
안지훈
CURRENT APPLIED PHYSICS, 2024
72
First demonstration of 2T0C-FeDRAM: a-ITZO FET and double gate a-ITZO/a-IGZO FeFET with a record-long multibit retention time of ?4-bit and ?2000 s
안지훈
NANOSCALE, 2024
73
Ultrathin Metal Films with Low Resistivity via Atomic Layer Deposition: Process Pressure Effect on Initial Growth Behavior of Ru Films
안지훈
CHEMISTRY OF MATERIALS, 2024
74
Low-resistivity molybdenum-carbide thin films formed by thermal atomic layer deposition with pressure-assisted decomposition reaction
안지훈
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2024
75
Highly area-selective atomic layer deposition of device-quality Hf1-xZrxO2 thin films through catalytic local activation
안지훈
CHEMICAL ENGINEERING JOURNAL, 2024
76
Optimization Method for Conductance Modulation in Ferroelectric Transistor for Neuromorphic Computing
안지훈
ADVANCED ELECTRONIC MATERIALS, 2024
77
Enhanced physical and electrical properties of HfO2 deposited by atomic layer deposition using a novel precursor with improved thermal stability
안지훈
SURFACES AND INTERFACES, 2023
78
Microscale spectroscopic mapping of defect evolution and filling in large-area growth of monolayer MoS2
안지훈
APPLIED SURFACE SCIENCE, 2023
79
Implementation of rutile-TiO?sub?2 ?/sub?thin films on TiN without post-annealing through introduction of SnO?sub?2 ?/sub? and its improved electrical properties
안지훈
SURFACES AND INTERFACES, 2023
80
Spike Optimization to Improve Properties of Ferroelectric Tunnel Junction Synaptic Devices for Neuromorphic Computing System Applications