Improved electrical performance of a sol-gel IGZO transistor with high-k Al2O3 gate dielectric achieved by post annealing
Lee, E (Lee, Esther), Kim, TH (Kim, Tae Hyeon), Lee, SW (Lee, Seung Won), Kim, JH (Kim, Jee Hoon), Kim, J (Kim, Jaeun), Jeong, TG (Jeong, Tae Gun), Ahn, JH (Ahn, Ji-Hoon), Cho, B (Cho, Byungjin)
NANO CONVERGENCE, 2019