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ELECTROCHEMICAL AND SOLID STATE LETTERS, 201207
152
Gate Engineering in TiN/La/TiN and TiLaN Metal Layers on Atomic-Layer-Deposited HfO2/Si
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IEEE ELECTRON DEVICE LETTERS, 201207
153
Vertically integrated submicron amorphous-In2Ga2ZnO7 thin film transistor using a low temperature process
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APPLIED PHYSICS LETTERS, 201205
154
Schottky diode with excellent performance for large integration density of crossbar resistive memory
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APPLIED PHYSICS LETTERS, 201205
155
Properties of Atomic Layer Deposited HfO2 Films on Ge Substrates Depending on Process Temperatures
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 201202
156
In-situ X-ray photoelectron spectroscopy of trimethyl aluminum and water half-cycle treatments on HF-treated and O-3-oxidized GaN substrates
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PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 201201
157
Impact of ozone concentration on atomic layer deposited HfO2 on GaAs
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MICROELECTRONIC ENGINEERING, 201201
158
ALD of LaHfOx nano-laminates for high-κ gate dielectric applications
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MICROELECTRONIC ENGINEERING, 201112
159
Investigation of Tunneling Current in SiO2/HfO2 Gate Stacks for Flash Memory Applications
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IEEE TRANSACTIONS ON ELECTRON DEVICES, 201112
160
Dependence of optimized annealing temperature for tetragonal phase formation on the Si concentration of atomic-layer-deposited Hf-silicate film
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