발행물

전체 논문

199

191

Fabrication of ultra thin IrO2-top-electrode for improving thermal stability of metal-insulator-metal field emission cathodes
박태주, 정두석, 황철성, 박민수, 강남석
THIN SOLID FILMS, 200501

192

Voltage-induced degradation in self-aligned polycrystalline silicon gate n -type field-effect transistors with HfO2 gate dielectrics
Park J., Cho M., Park H.B., Park T.J., Lee S.W., Hong S.H., Jeong D.S., Lee C., Hwang C.S.
Applied Physics Letters, 200412

193

Comparison between atomic-layer-deposited HfO2 films using O3 or H2O oxidant and Hf[N(CH3)2]4 precursor
박태주, 조문주, 박재후, 박홍배, 이석우, 황철성, 장기훈, 정재학
APPLIED PHYSICS LETTERS, 200412

194

Improvements in reliability and leakage current properties of HfO 2 gate dielectric films by in Situ O3 oxidation of Si substrate
Park H.B., Cho M., Park J., Lee S.W., Park T.J., Hwang C.S.
Electrochemical and Solid-State Letters, 2004

195

세계 권위 학술지 '어드밴스드 사이언스' 표지논문 소개
어드밴스드 사이언스, 2023.12

196

원자층 증착법을 이용한 열전 소재 연구 동향
박태주
한국분말야금학회지, 202202

197

Sulfur Incorporation at Interface Between Atomic-Layer-Deposited Al2O3 Thin Film and AlGaN/GaN Heterostructure
박태주
ELECTRONIC MATERIALS LETTERS, 201903

198

Electrical Characteristics of SiO2/4H-SiC Metal-oxide-semiconductor Capacitors with Low-temperature Atomic Layer Deposited SiO2
박태주
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 201704

199

Contact Resistance and Leakage Current of GaN Devices with Annealed Ti/Al/Mo/Au Ohmic Contacts
박태주
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 201604