Comparison of Electrical Properties Between HfO2 Films on Strained and Relaxed Si1?x Gex Substrates

Enhancement in thermal stability of atomic layer deposited HfO2 films by using top Hf metal layer

Improvement of thermal stability and composition changes of atomic layer deposited HfO2 on Si by in situ O3 pretreatment

Improvements in the electrical properties of high-k HfO2 dielectric films on Si1-xGex substrates by post deposition annealing

Atomic rearrangements in HfO2/Si1-xGex interfaces

Influence of the oxygen concentration of atomic-layer-deposited HfO2 gate dielectric films on the electron mobility of polycrystalline-Si gate transistors

Improvement of the current-voltage characteristics of a tunneling dielectric by adopting a Si3N4 /SiO2/Si3N4 multilayer for flash memory application

Fabrication of HfO2 Thin-Film Capacitors with a Polycrystalline Si Gate Electrode and a Low Interface Trap Density

Electrical properties of high-k HfO2 films on Si1-xGex substrates

Influence of the oxygen concentration of atomic-layer-deposited HfO2 films on the dielectric property and interface trap density