Charge trap memory characteristic of Ge2Sb2Te5 nano-islands with high-k blocking oxides
박태주
ELECTROCHEMICAL AND SOLID STATE LETTERS, 200908
172
Effects of Annealing Environment on Interfacial Reactions and Electrical Properties of Ultrathin SrTiO3 on Si
박태주
JOURNAL OF APPLIED ELECTROCHEMISTRY, 200907
173
Electrical properties of atomic-layer-deposited La2O3 films using a novel La formamidinate precursor and ozone
박태주
MICROELECTRONIC ENGINEERING, 200907
174
Reduced Electrical Defects and Improved Reliability of Atomic-Layer-Deposited HfO2 Dielectric Films by In Situ NH3 Injection
박태주
JOURNAL OF APPLIED ELECTROCHEMISTRY, 200903
175
Electron energy-loss spectroscopy analysis of HfO2 dielectric films on strained and relaxed SiGe/Si substrates
박태주, 장지영, 장재혁, 권지환, 황철성, 김미영
APPLIED PHYSICS LETTERS, 200807
176
Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films
박태주, 황철성, 김정환, 장재혁, 나광덕, 김기만, 최강준, 정재학
APPLIED PHYSICS LETTERS, 200805
177
Effects of surface treatments using O3 and NH3 on electrical properties and chemical structures of high-k HfO2 dielectric films on strained Si1-xGex /Si substrates
박태주, 김정환, 장재혁, 나광덕, 원정연, 황철성
JOURNAL OF APPLIED PHYSICS, 200804
178
Influence of Phase Separation on Electrical Properties of ALD Hf?Silicate Films with Various Si Concentrations
박태주, 김정환, 장재혁, 나광덕, 유정호, 황철성
Electrochemical and Solid-State Letters, 200803
179
Improved Electronic Performance of HfO2/SiO2 Stacking Gate Dielectric on 4H SiC
박태주, Kuan Yew Cheong, 문정현, 김정환, 황철성, 김형준, 방욱, 김남균
IEEE Transactions on Electron Devices, 200712
180
Improved electrical performances of plasma enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma