발행물
컨퍼런스
The 32st Korean Conference on Semiconductors
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High-k Nb2O5/2D Metallic NbS2 Gate Stack Architecture via Thermal Conversion of NbS2
Contact resistance reduction in Tellurium Field-Effect Transistors via Al2O3 interlayers
Correlation study between Raman vibration modes and electrical properties of 2D In2Se3
Contact resistance reduction of Te transistor using UVO treatment
Characteristics of a synaptic transistor with a high-purity semiconducting CNT channel wrapped with polymer