발행물
컨퍼런스
The 30th Korean Conference on Semiconductors
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Polycrystalline MoS2 Memtransistor Treated with O2 Plasma: A Wide Tunable Resistive Switching Based on Sulfur Vacancy Modulation
InGaZnO Field Effect Transistor with Buried-gate Structure Enabling Highly Stable Device
2D NbS2/MoS2/p-Si Heterostructured Photodetector Enabling High Photoresponsivity in Visible Wavelength
Implementation of Reliable Memcapacitor Synaptic Device via Ge/high-k Interface Plasma Treatment
제26회 한국진공학회 반도체및박막 분과 워크샵
2022.12
Tunable resistive switching based on sulfur vacancy engineering of polycrystalline MoS2