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HfO2/InGaZnO double-layered transistor with low-powered switching enabled by quasi-two-dimensional electron channel

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Reliable PVDF-TrFE ferroelectric polymer-based InGaZnO synaptic transistors with buried-gate structure

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High performance MoS2 transistor based on Atomically thin 2D NbS2 metal gate

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High-responsive photodetector with seamless edge-to-edge connected 2D metal and semiconductor junctions

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Low-Powered Switching of HfO2/InGaZnO Double-Layered Transistor with Two-Dimensional Electron Channel