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Dielectric Properties of MIS Capacitors Utilizing the Nb2O5 Oxidized from 2D NbS2

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2D PN (Te-MoS2) Semiconductor-Based High-performance Infrared Photodetector

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Enhanced Electrical Properties of MIS Capacitor with Graphene-embedded Al2O3 dielectric structure

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Performance enhancement of MoS2 transistor based on Metallic NbS2 as a local bottom gate electrode

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Reliable PVDF-TrFE ferroelectric polymer-based InGaZnO synaptic transistors with buried-gate structure