,

InGaZnO/Graphene Cold Source Field Effect Transistors Enabling a Super-Steep Subthreshold Swing Below 60 mV/dec

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Frequency-Dependent Synaptic Dynamics of Al2O3/HfO2 High-k Dielectric Double-Structured Transistor Based on the Trade-Off Between Charge Trapping and Ferroelectric Effects

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Reliable Ge-based Memcapacitor Synaptic Device enabled by CF4 Plasma

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High responsive InSe based photodetector using RF magnetron sputtering

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Reduction of Contact resistance in Tellurium Field-Effect Transistor Achieved by Graphene Interlayer