,

Tunable resistive switching based on sulfur vacancy engineering of polycrystalline MoS2

,

Outstanding optical performance of NbS2/n-MoS2/p-Si heterostructured photodiode via one-step CVD process

,

Highly Stable InGaZnO Field effect Transistor with buried-gate structure

,

N-MoS2/p-Si Heterojunction with Graphene Interlayer for High-performance IR Photodetector

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Extraordinary switching characteristics of two-dimentional electron channel chofined in a HfO2/InGaZnO interface