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전체 논문

291

201

Energy conversion and storage using artificially induced antiferroelectricity in HfO2/ZrO2 nanolaminates
양건, 이동현, Lee Je In, 박주용, 박근형, 김세현, 박민혁, Kim Gun Hwan, Lee Eun Been, Yu Geun Taek
COMPOSITES PART B-ENGINEERING, 202205

202

Engineering Strategies in Emerging Fluorite-Structured Ferroelectrics
박민혁, 김광호, 이동현, 양건, 박근형, 유근택, 김세현, 이은빈, 박주용
ACS APPLIED ELECTRONIC MATERIALS, 202204

203

Modulating the Ferroelectricity of Hafnium Zirconium Oxide Ultrathin Films via Interface Engineering to Control the Oxygen Vacancy Distribution
박민혁, Lee Joonbong, Choi Taekjib, Song Myeong Seop, Jang Woo-Sung, Byun Jinho, Lee Hojin, Park Min Hyuk, Lee Jaekwang, Kim Young-Min, Chae Seung Chul
ADVANCED MATERIALS INTERFACES, 202203

204

Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film
박민혁, Cheng Yan, Gao Zhaomeng, Ye Kun Hee, Park Hyeon Woo, Zheng Yonghui, Zheng Yunzhe, Gao Jianfeng, Choi Jung-Hae, Xue Kan-Hao, Hwang Cheol Seong, Lyu Hangbing
NATURE COMMUNICATIONS, 202202

205

Effects of oxygen sources on properties of atomic-layer-deposited ferroelectric hafnium zirconium oxide thin films
박민혁, 조아진, 김성근, 정홍근, 백인환, 양건, 백승협
CERAMICS INTERNATIONAL, 202202

206

Effect of residual impurities on polarization switching kinetics in atomic-layer-deposited ferroelectric Hf0.5Zr0.5O2 thin films
박민혁, 이제인, 이동현, 김건환, 유근택, 박주용, 김세현, 양건, 박근형, 류진주
ACTA MATERIALIA, 202201

207

Binary ferroelectric oxides for future computing paradigms
박민혁, 권대웅, Mikolajick, T, Schroeder, U
MRS BULLETIN, 202112

208

Interfacial engineering of a Mo/Hf0.3Zr0.7O2/Si capacitor using the direct scavenging effect of a thin Ti layer
김세현, 박민혁, 이제인, 유근택, 박근형, 이동현, 박주용, 양건, 이은빈
CHEMICAL COMMUNICATIONS, 202111

209

Effects of Rapid Thermal Annealing on the Structural, Optical, and Electrical Properties of Au/CuPc/n-Si (MPS)-type Schottky Barrier Diodes
P. R. Sekhar Reddy, 최철종, V. Rajagopal Reddy, 박민혁, V. Janardhanam
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 202110

210

Improved ferroelectricity in Hf0.5Zr0.5O2 by inserting an upper HfOxNy interfacial layer
김범용, 박민혁, 황철성, 김세현, 박현우, 이용빈, 이석현, 오민식, 류승규, 이인수, 변승용, 심두섭
APPLIED PHYSICS LETTERS, 202109