발행물

전체 논문

291

231

Preparation and characterization of ferroelectric Hf0.5Zr0.5O2 thin films grown by reactive sputtering
Lee, YH (Lee, Young Hwan), Kim, HJ (Kim, Han Joon), Moon, T (Moon, Taehwan), Do Kim, K (Do Kim, Keum), Hyun, SD (Hyun, Seung Dam), Park, HW (Park, Hyeon Woo), Bin Lee, Y (Bin Lee, Yong), Park, MH (Park, Min Hyuk), Hwang, CS (Hwang, Cheol Seong)
NANOTECHNOLOGY, 201707

232

Effect of acceptor doping on phase transitions of HfO2 thin films for energy-related applications
Park, MH (Park, Min Hyuk), Schenk, T (Schenk, Tony), Hoffmann, M (Hoffmann, Michael, Knebel, S (Knebel, Steve), Gartner, J (Gaertner, Jan), Mikolajick, T (Mikolajick, Tho, Schroeder, U (Schroeder, Uwe)
NANO ENERGY, 201706

233

Optimizing process conditions for improved Hf-1 - ZrxO2 ferroelectric capacitor performance
Mittmann, T (Mittmann, Terence, Fengler, FPG (Fengler, Franz P, Richter, C (Richter, Claudia), Park, MH (Park, Min Hyuk), Mikolajick, T (Mikolajick, Tho, Schroeder, U (Schroeder, Uwe)
MICROELECTRONIC ENGINEERING, 201706

234

A comprehensive study on the structural evolution of HfO2 thin films doped with various dopants
Park, MH (Park, M. H.), Schenk, T (Schenk, T.), Fancher, CM (Fancher, C. M.), Grimley, ED (Grimley, E. D.), Zhou, C (Zhou, C.), Richter, C (Richter, C.), LeBeau, JM (LeBeau, J. M.), Jones, JL (Jones, J. L.), Mikolajick, T (Mikolajick, T.), Schroeder, U (Schroeder, U.)
JOURNAL OF MATERIALS CHEMISTRY C, 201705

235

Domain Pinning: Comparison of Hafnia and PZT Based Ferroelectrics
Fengler, FPG (Fengler, Franz P, Pesic, M (Pesic, Milan), Starschich, S (Starschich, Ser, Schneller, T (Schneller, Theod, Kunneth, C (Kuenneth, Christop, Bottger, U (Boettger, Ulrich), Mulaosmanovic, H (Mulaosmanovi, Schenk, T (Schenk, Tony), Park, MH (Park, Min Hyuk), Nigon, R (Nigon, Robin), Muralt, P (Muralt, Paul), Mikolajick, T (Mikolajick, Tho, Schroeder, U (Schroeder, Uwe).
ADVANCED ELECTRONIC MATERIALS, 201704

236

Research Update: Diode performance of the Pt/Al2O3/two-dimensional electron gas/SrTiO3 structure and its time-dependent resistance evolution
Moon, T (Moon, Taehwan), Jung, HJ (Jung, Hae Jun), Kim, YJ (Kim, Yu Jin), Park, MH (Park, Min Hyuk), Kim, HJ (Kim, Han Joon), Do Kim, K (Do Kim, Keum), Lee, YH (Lee, Young Hwan), Hyun, SD (Hyun, Seung Dam), Park, HW (Park, Hyeon Woo), Lee, SW (Lee, Sang Woon), Hwang, CS (Hwang, Cheol Seong)
APL MATERIALS, 201704

237

Giant Negative Electrocaloric Effects of Hf0.5Zr0.5O2 Thin Films
Park, MH (Park, Min Hyuk), Kim, HJ (Kim, Han Joon), Kim, YJ (Kim, Yu Jin), Moon, T (Moon, Taehwan), Do Kim, K (Do Kim, Keum), Lee, YH (Lee, Young Hwan), Hyun, SD (Hyun, Seung Dam), Hwang, CS (Hwang, Cheol Seong)
ADVANCED MATERIALS, 201609

238

Two-step polarization switching mediated by a nonpolar intermediate phase in Hf<inf>0.4</inf>Zr<inf>0.6</inf>O<inf>2</inf> thin films
Park M.H., Kim H.J., Lee Y.H., Kim Y.J., Moon T., Kim K.D., Hyun S.D., Hwang C.S.
Nanoscale, 201608

239

Time-Dependent Negative Capacitance Effects in Al2O3/BaTiO3 Bilayers
Kim, YJ (Kim, Yu Jin), Yamada, H (Yamada, Hiroyuki), Moon, T (Moon, Taehwan), Kwon, YJ (Kwon, Young Jae), An, CH (An, Cheol Hyun), Kim, HJ (Kim, Han Joon), Do Kim, K (Do Kim, Keum), Lee, YH (Lee, Young Hwan), Hyun, SD (Hyun, Seung Dam), Park, MH (Park, Mm Hyuk), Hwang, CS (Hwang, Cheol Seong)
NANO LETTERS, 201607

240

Effect of Zr Content on the Wake-Up Effect in Hf1-xZrxO2 Films
Park, MH (Park, Min Hyuk), Kim, HJ (Kim, Han Joon), Kim, YJ (Kim, Yu Jin), Lee, YH (Lee, Young Hwan), Moon, T (Moon, Taehwan), Do Kim, K (Do Kim, Keum), Hyun, SD (Hyun, Seung Dam), Fengler, F (Fengler, Franz), Schroeder, U (Schroeder, Uwe), Hwang, CS (Hwang, Cheol Seong)
ACS APPLIED MATERIALS INTERFACES, 201606