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291

221

Pyroelectricity of silicon-doped hafnium oxide thin films
Jachalke, S (Jachalke, Sven), Schenk, T (Schenk, Tony), Park, MH (Park, Min Hyuk), Schroeder, U (Schroeder, Uwe), Mikolajick, T (Mikolajick, Tho, Stocker, H (Stoecker, Hartmut), Mehner, E (Mehner, Erik), Meyer, DC (Meyer, Dirk C.)
APPLIED PHYSICS LETTERS, 201804

222

Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material
Schroeder, U (Schroeder, Uwe), Richter, C (Richter, Claudia), Park, MH (Park, Min Hyuk), Schenk, T (Schenk, Tony), Pesic, M (Pesic, Milan), Hoffmann, M (Hoffmann, Michael, Fengler, FPG (Fengler, Franz P, Pohl, D (Pohl, Darius), Rellinghaus, B (Rellinghaus, B, Zhou, CZ (Zhou, Chuanzhen), Chung, CC (Chung, Ching-Chang), Jones, JL (Jones, Jacob L.), Mikolajick, T (Mikolajick, Tho
INORGANIC CHEMISTRY, 201803

223

Understanding the formation of the metastable ferroelectric phase in hafnia-zirconia solid solution thin films
Park, MH (Park, Min Hyuk), Lee, YH (Lee, Young Hwan), Kim, HJ (Kim, Han Joon), Kim, YJ (Kim, Yu Jin), Moon, T (Moon, Taehwan), Do Kim, K (Do Kim, Keum), Hyun, SD (Hyun, Seung Dam), Mikolajick, T (Mikolajick, Tho, Schroeder, U (Schroeder, Uwe), Hwang, CS (Hwang, Cheol Seong)
NANOSCALE, 201801

224

Improved Ferroelectric Switching Endurance of La -Doped Hf0.5Zr0.5O2 Thin Films
Chernikova, AG (Chernikova, An, Kozodaev, MG (Kozodaev, Maxim, Negrov, DV (Negrov, Dmitry V.), Korostylev, EV (Korostylev, Ev, Park, MH (Park, Min Hyuk), Schroeder, U (Schroeder, Uwe), Hwang, CS (Hwang, Cheol Seong), Markeev, AM (Markeev, Andrey M
ACS APPLIED MATERIALS INTERFACES, 201801

225

Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories
Jiang J., Bai Z.L., Chen Z.H., He L., Zhang D., Zhang Q.H., Shi J.A., Park M.H., Scott J.F., Hwang C.S., Jiang A.Q.
Nature Materials, 2018

226

Voltage Drop in a Ferroelectric Single Layer Capacitor by Retarded Domain Nucleation
Kim Y.J., Park H.W., Hyun S.D., Kim H.J., Kim K.D., Lee Y.H., Moon T., Lee Y.B., Park M.H., Hwang C.S.
Nano Letters, 201712

227

Si Doped Hafnium Oxide-A "Fragile" Ferroelectric System
Richter, C (Richter, Claudia), Schenk, T (Schenk, Tony), Park, MH (Park, Min Hyuk), Tscharntke, FA (Tscharntke, Fr, Grimley, ED (Grimley, Everett, LeBeau, JM (LeBeau, James M.), Zhou, CZ (Zhou, Chuanzhen), Fancher, CM (Fancher, Chris M., Jones, JL (Jones, Jacob L.), Mikolajick, T (Mikolajick, Tho, Schroeder, U (Schroeder, Uwe).
ADVANCED ELECTRONIC MATERIALS, 201710

228

Scale-up and optimization of HfO<inf>2</inf>-ZrO<inf>2</inf> solid solution thin films for the electrostatic supercapacitors
Kim K.D., Lee Y.H., Gwon T., Kim Y.J., Kim H.J., Moon T., Hyun S.D., Park H.W., Park M.H., Hwang C.S.
Nano Energy, 201709

229

Ferroelectric properties of lightly doped La:HfO2 thin films grown by plasma-assisted atomic layer deposition
Kozodaev, MG (Kozodaev, M. G.), Chernikova, AG (Chernikova, A., Korostylev, EV (Korostylev, E., Park, MH (Park, M. H.), Schroeder, U (Schroeder, U.), Hwang, CS (Hwang, C. S.), Markeev, AM (Markeev, A. M.)
APPLIED PHYSICS LETTERS, 201709

230

Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: A comparison of model and experiment
Park M.H., Lee Y.H., Kim H.J., Schenk T., Lee W., Kim K.D., Fengler F.P.G., Mikolajick T., Schroeder U., Hwang C.S.
Nanoscale, 201707