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272
Next generation ferroelectric materials for semiconductor process integration and their applications
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JOURNAL OF APPLIED PHYSICS, 202103
273
Suppressed Stochastic Switching Behavior and Improved Synaptic Functions in an Atomic Switch Embedded with a 2D NbSe<inf>2</inf>Material
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ACS APPLIED MATERIALS & INTERFACES, 202103
274
Ultra-flexible and rollable 2D-MoS<inf>2</inf>/Si heterojunction-based near-infrared photodetector: Via direct synthesis
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Nanoscale, 202101
275
A perspective on semiconductor devices based on fluorite-structured ferroelectrics from the materials-device integration perspective
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JOURNAL OF APPLIED PHYSICS, 202012
276
플루오라이트 구조 강유전체 박막의 분극 반전 동역학 리뷰
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한국표면공학회지, 202012
277
Field-Induced Ferroelectric Hf<inf>1-</inf><inf>x</inf>Zr<inf>x</inf>O<inf>2</inf> Thin Films for High-k Dynamic Random Access Memory
김호현, 이영환, 박민혁, 박현우, 김범용, 김백수, 현승담, 황철성, 이용빈
ADVANCED ELECTRONIC MATERIALS, 202011
278
새로운 플루오라이트 구조 강유전체의 Electrocaloric Effect
양건, 이동현, 박민혁, 박주용
한국재료학회지, 202009
279
Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devices
박민혁, Uwe Schroeder, Monica Materano, Thomas Mikolajick, 양건, Terence Mittmann, 이동현, 황철성, 유근택, Patrick D Lomenzo, 박현우