발행물
컨퍼런스
2011 Materials Research Society Spring Meeting
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Influence of Low Temperature Annealing on Properties of Silicon-rich Silicon Nitride Films Prepared by Cat-CVD
Characteristic Analysis of Multifunctional SiNx:H Films at Low Temperatures (<150oC) by PECVD
제7차 강유전체 연합 심포지엄
Study of Silicon Nitride Films Fabricated at a Low Temperature by Cat-CVD for Gate Dielectric in Silicon Based TFTs
Characteristics of SiNx Gate Dielectric Layer for Silicon Based TFTs Fabricated at a Low Temperature Using Highly N2-diluted SiH4 gas by PECVD
Influence of Concentration of Silicon Nanocrystals on Properties of Silicon-Rich Silicon Nitride Films Prepared by Cat-CVD at Low Temperature