발행물
컨퍼런스
The 17th International Display Workshops
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Characteristics of Silicon Nanocrystals Embedded in the Silicon Nitride Films Deposited by PECVD at a Low Temperature
Annealing Effect of Low Temperature (<150 C) Cat-CVD Gate Dielectric Silicon Nitride Films Diluted with Atomic Hydrogen
Photoconductivity in Silicon Rich Silicon Nitride Films Containing Silicon Nanocrystals Prepared by Catalytic CVD
10th International Meetings on Information Display
Effect of Atomic in-situ Hydrogen Annealing for Gate Dielectric Cat-CVD Silicon Nitride Films on Flexible Substrate at temperature Below 200 C
Photoluminescence characteristics and chemical composition of SiNx:H films with various gas mixture ratio at low temperature