,

initial growth of ALD-SrTiO3 films with interposed ALD-Al2O3 layer

,

Electrical properties of TiO2-based MIM capacitors deposited by TiCl4 and TTIP based atomic layer deposition processes

,

Controlling initial growth of ALD-SrTiO3 films with interposed ALD-Al2O3 layers

,

Atomic layer/chemical vapor deposited SrRuO3 thin films using RuO4 and Sr(iPr3Cp)2 precursors for next generation DRAM capacitor electrode

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Capacitors with an equivalent oxide thickness of <0.5nm for next generation semiconductor memory