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A Mass-production Compatible Capacitor Technology for DRAMs with Design Rule Down to 20nm

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Pulsed-Chemical Vapor Deposition of Ruthenium and Ruthenium Dioxide Thin Films using RuO4 Precursor for the DRAM Capacitor Electrode

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Improved Growth Behaviors of SrTiO3 Thin Films Using the Optimized Seed Layer deposited by Atomic Layer Deposition

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Pulsed-Chemical vapor deposition of Ruthenium thin films Using RuO4 precursor for the DRAM capacitor electrode

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ALD 방법으로 증착한 TiO2/Ru 박막을 이용한 박막형 다층 세라믹 커패시터(MLCC)의 제조 및 특성