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115

51

Leakage Current Control of SrTiO3 Thin Films through Al Doping at the Interface between Dielectric and Electrode Layers via Atomic Layer Deposition
Sang Hyeon Kim, Woongkyu Lee, Cheol Hyun An, Yumin Kim, Dae Seon Kwon, Dong-Gun Kim, Soon Hyung Cha, Seong Tak Cho, Junil Lim, Cheol Seong Hwang
Phys. Status Solidi RRL, 2019

52

Cs2SnI6-Encapsulated Multidye-Sensitized All-Solid-State Solar Cells
Byunghong Lee, Yamuna Ezhumalai, Woongkyu Lee, Ming-Chou Chen, Chen-Yu Yeh, Tobin J. Marks, Robert P. H. Chang
ACS Appl. Mater. Interfaces, 2019

53

Processing, Structure, and Transistor Performance: Combustion versus Pulsed Laser Growth of Amorphous Oxides
Stephanie L. Moffitt, Katie L. Stallings, Allison F. Falduto, Woongkyu Lee, D. Bruce Buchholz, Binghao Wang, Qing Ma, Robert P. H. Chang, Tobin J. Marks, Michael J. Bedzyk
ACS Appl. Electron. Mater., 2019

54

Effect of the annealing temperature of the seed layer on the following main layer in atomic-layer-deposited SrTiO3 thin films
Sang Hyeon Kim, Woongkyu Lee, Cheol Hyun An, Dong-Gun Kim, Dae Seon Kwon, Seong Tak Cho, Soon Hyung Cha, Jun Il Lim, Cheol Seong Hwang
Phys. Status Solidi RRL, 2019

55

Controlling the electrical characteristics of ZrO2/Al2O3/ZrO2 capacitors by adopting a Ru top electrode grown via atomic layer deposition
Cheol Hyun An, Woongkyu Lee, Sang Hyeon Kim, Cheol Jin Cho, Dong-Gun Kim, Dae Seon Kwon, Seong Tak Cho, Soon Hyung Cha, Jun Il Lim, Woojin Jeon, Cheol Seong Hwang
Phys. Status Solidi RRL, 2019

56

Effect of Growth Temperature during the Atomic Layer Deposition of the SrTiO3 Seed Layer on the Properties of RuO2/SrTiO3/Ru Capacitors for Dynamic Random Access Memory Applications
Kim, SH (Kim, Sang Hyeon), Lee, W (Lee, Woongkyu), An, CH (An, Cheol Hyun), Kwon, DS (Kwon, Dae Seon), Kim, DG (Kim, Dong-Gun), Cha, SH (Cha, Soon Hyung), Cho, ST (Cho, Seong Tak), Hwang, CS (Hwang, Cheol Seong)
ACS APPLIED MATERIALS INTERFACES, 2018

57

MoO2 as a thermally stable oxide electrode for dynamic random-access memory capacitors
Lee, W (Lee, Woongkyu), Cho, CJ (Cho, Cheol Jin), Lee, WC (Lee, Woo Chul), Hwang, CS (Hwang, Cheol Seong), Chang, RPH (Chang, Robert P. H, Kim, SK (Kim, Seong Keun)
JOURNAL OF MATERIALS CHEMISTRY C, 2018

58

Electrical Properties of ZrO2/Al2O3/ZrO2-Based Capacitors with TiN, Ru, and TiN/Ru Top Electrode Materials
Lee, W (Lee, Woongkyu), Yoo, S (Yoo, Sijung), Kim, SH (Kim, Sang Hyeon), Jeon, W (Jeon, Woojin), Hwang, CS (Hwang, Cheol Seong), Chung, MJ (Chung, Min Jung), An, CH (An, Cheol Hyun)
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2018

59

Quantitative Analysis of the Incorporation Behaviors of Sr and Ti Atoms During the Atomic Layer Deposition of SrTiO3 Thin Films
Chung, MJ (Chung, Min Jung), Jeon, W (Jeon, Woojin), An, CH (An, Cheol Hyun), Kim, SH (Kim, Sang Hyeon), Lee, YK (Lee, Yoon Kyeung), Lee, W (Lee, Woongkyu), Hwang, CS (Hwang, Cheol Seong)
ACS APPLIED MATERIALS INTERFACES, 2018

60

MoO2 as a thermally stable oxide electrode for dynamic random-access memory capacitors
Woongkyu Lee, Cheol Jin Cho, Woo Chul Lee, Cheol Seong Hwang, Robert P. H. Chang, Seong Keun Kim
J. Mater. Chem. C, 2018