Evaluating the top electrode material for achieving an equivalent oxide thickness smaller than 0.4 nm from an Al-doped TiO2 film
Woojin Jeon, Sijung Yoo, Hyo Kyeom Kim, Woongkyu Lee, Cheol Hyun An, Min Jung Chung, Cheol Jin Cho, Seong Keun Kim, Cheol Seong Hwang
ACS Appl. Mater. Interfaces, 2014
82
Chemistry of active oxygen in RuOx and its influence on the atomic layer deposition of TiO2 films
Woojin Jeon, Woongkyu Lee, Yeon Woo Yoo, Cheol Hyun An, Jeong Hwan Han, Seong Keun Kim, Cheol Seong Hwang
J. Mater. Chem. C, 2014
83
Study on the degradation mechanism of the ferroelectric properties of thin Hf0.5Zr0.5O2 films on TiN and Ir electrodes
Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Woongkyu Lee, Taehwan Moon, Keum Do Kim, Cheol Seong Hwang
Appl. Phys. Lett., 2014
84
Influences of metal, non-metal precursors, and substrates on atomic layer deposition processes for the growth of selected functional electronic materials
Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature
Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Woongkyu Lee, Taehwan Moon, Cheol Seong Hwang
Appl. Phys. Lett., 2013
89
Influences of metal, non-metal precursors, and substrates on atomic layer deposition processes for the growth of selected functional electronic materials
Sang Woon Lee, Byung Joon Choi, Taeyong Eom, Jeong Hwan Han, Seong Keun Kim, Seul Ji Song, Woongkyu Lee, Cheol Seong Hwang
Coord. Chem. Rev., 2013
90
Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes
Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Woongkyu Lee, Hyo Kyeom Kim, Cheol Seong Hwang