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1
Low-Frequency Noise Characterization of Positive Bias Stress Effect on the Spatial Distribution of Trap in β-Ga2O3 FinFET
H. Bae, G. B. Lee, J. Yoo, K.-S. Lee, J.-Y. Ku, K. Kim, J. Kim, P. D. Ye, J.-Y. Park*, Y.-K. Choi*
Solid-State Electron., 2024
2
High-Pressure Deuterium Annealing for Trap Passivation for a 3D Integrated Structure
J.-W. Lee, J.-K. Han, D.-H. Wang, S.-Y. Yun, J.-S. Oh, B.-C. Bang, W.-H. Cha, J.-Y. Park, Y.-K. Choi*
IEEE Trans. Electron Devices, 2024
3
Low-Temperature Deuterium Annealing for High Performance and Reliable Poly-Si Channel Thin-Film Transistors
T.-H. Kil, J.-H. Kim, J.-Y. Ku, D.-H. Wang, D.-H. Jung, M. H. Kang, J.-Y. Park*
IEEE Trans. Electron Devices, 2024
4
Physically Unclonable Function with a Rough Silicon Channel MOSFET
D.-H. Jung, J.-M. Yu, J.-Y. Ku, S.-S. Yoon, J.-H. Kim, J.-K. Han, T.-H. Kil, D.-H. Wang, J.-W. Yeon, Y.-K. Choi*, J.-Y. Park*
IEEE Trans. Electron Devices, 2024
5
Low-Temperature Deuterium Annealing for Improved Electrical Characteristics of SONOS
D.-H. Jung, S.-S. Yoon, D.-H. Wang, J.-Y. Ku, T.-H. Kil, D.-H. Kim, J.-Y. Park*
Microelectron. Reliab., 2023
6
Lowering of Schottky Barrier Height in a Vertical Pillar MOSFET by Deuterium Annealing
J.-M. Yu, D.-H. Wang, J.-K. Han, S.-Y. Yun, J.-Y. Park, Y.-K. Choi*
IEEE Electron Device Lett., 2023
7
Improved SOI FinFETs Performance with Low-Temperature Deuterium Annealing
J.-Y. Ku, J.-M. Yu, D.-H. Wang, D.-H. Jung, J.-K. Han, Y.-K. Choi*, J.-Y. Park*
IEEE Trans. Electron Devices, 2023
8
Vacuum Inner Spacer to Improve Annealing Effect during Electro-Thermal Annealing of Nanosheet FETs
D.-H. Wang, K.-S. Lee, J.-Y. Park*
Micromachines, 2023
9
High Pressure Deuterium Annealing for Improved Immunity Against Stress-Induced Threshold Voltage Degradation
D.-H. Jung, W. C. Shin, M.-K. Kim, J.-Y. Ku, D.-H. Wang, K.-S. Lee, J.-Y. Park*
IEEE Trans. Device Mater. Reliab., 2022
10
Low-Temperature Deuterium Annealing to Improve Performance and Reliability in a MOSFET
J.-M. Yu, D.-H. Wang, J.-Y. Ku, J.-K. Han, D.-H. Jung, J.-Y. Park*, Y.-K. Choi*
Solid-State Electron., 2022
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