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11
Trench Gate Nanosheet FET to Suppress Leakage Current from Substrate Parasitic Channel
K.-S. Lee, B.-D. Yang, J.-Y. Park*
IEEE Trans. Electron Devices, 2023
12
Impact of Device-to-Device Interference in Nanosheet Field-Effect Transistors
K.-S. Lee, W. C. Shin, J.-W. Yeon, J.-Y. Park*
Microelectron. Reliab., 2023
13
Comprehensive Study on Trap-induced Bias Instability via High-Pressure D2 and N2 Annealing
J.-Y. Ku, K.-S. Lee, D.-H. Jung, D.-H. Wang, S. Oh, K. Lee, B. Cho, H. Bae*, J.-Y. Park*
IEEE Trans. Device Mater. Reliab., 2023
14
Low-Temperature Deuterium Annealing for the Recovery of Ionizing Radiation-Induced Damage in MOSFETs
D.-H. Wang, S.-S. Yoon, J.-Y. Ku, D.-H. Jung, K.-S. Lee, D. Kim, J.-Y. Park*
IEEE Trans. Device Mater. Reliab., 2023
15
Device Optimization for Short-Channel Effects Suppression in UFETs
S.-S. Yoon, J.-Y. Ku, K.-S. Lee, D.-H. Jung, D.-H. Wang, J.-Y. Park*
J. Semicond. Technol. Sci., 2023
16
Ionizing Radiation-Induced Damage Recovery Using Low-Temperature Deuterium Annealing
D.-H. Wang, K.-S. Lee, J.-Y. Park*
IEEE Trans. Device Mater. Reliab., 2023
17
Investigation of Mechanical Stability during Electrothermal Annealing in a 3D NAND Flash Memory String
Y.-J. Kim, J.-Y. Park
J. Semicond. Technol. Sci., 2022
18
N-Type Nanosheet FETs without Ground Plane Region for Process Simplification
K.-S. Lee, J.-Y. Park
Micromachines, 2022
19
Impact of Iterative Deuterium Annealing in Long-Channel MOSFET Performance
D.-H. Wang, J.-Y. Ku, D.-H. Jung, K.-S. Lee, W. C. Shin, B.-D. Yang, J.-Y. Park
Materials, 2022
20
Power Reduction in Punch-Through Current-Based Electro-Thermal Annealing in Gate-All-Around FETs
M.-K. Kim, Y.-K. Choi, J.-Y. Park
Micromachines, 2022
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