발행물

전체 논문

75

71

Comparison of Efficiency of Flash Memory Device Structure in Electro-Thermal Erasing Configuration
Y.-J. Kim, S.-E. Lee, K.-S. Lee, J.-Y. Park*
J. Korean Inst. Electr. Electron. Mater. Eng., 2022

72

Improvement of Electrical Characteristics of MOSFETs using High Pressure Deuterium Annealing
D.-H. Jung, J.-Y. Ku, D.-H. Wang, Y.-S. Son, J.-Y. Park*
J. Korean Inst. Electr. Electron. Mater. Eng., 2022

73

Study on Improving the Mechanical Stability of 3D NAND Flash Memory String during Electro-Thermal Annealing
Y.-J. Kim, J.-Y. Park*
J. Korean Inst. Electr. Electron. Mater. Eng.,

74

Investigation of Mechanical Stability of Nanosheet FETs during Electro-Thermal Annealing
D.-H. Wang, J.-Y. Park*
J. Korean Inst. Electr. Electron. Mater. Eng., 2022

75

Physically Unclonable Function Using All-Solution-Processed MoS2
B. Kim, H. Kim, J.-Y. Park*
Journal of the Institute of Electronics and Information Engineers, 2021