발행물
컨퍼런스
29회 반도체학술대회
2022
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Hafnia based Ferroelectric Tunnel Junction Synaptic Device for Neuromorphic Computing Application
Dependence between Polarization Switching Properties of Ferroelectric and Subthreshold Swing in NCFET
Inherently Area-Selective Atomic Layer Deposition of Device-Quality Hf1-xZrxO2 Thin Films through Catalytic Local Activation
Ferroelectricity of Hf1-xZrxO2 Thin Films Using Hf[Cp(NMe2)3] and Zr[Cp(NMe2)3] Precursors Depending on Zr Content via Atomic Layer Deposition
Improvement of the Electrical Properties in Hf0.3Zr0.7O2 with Al Doping Using Atomic Layer Deposition