발행물
컨퍼런스
ELECTRONIC MATERIALS CONFERENCE
2002
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THE CHARACTERISTICS OF HFO2 THIN FILMS AS GATE DIELECTRICS
INTERFACIAL REACTION BETWEEN POLY SIGE AND ZRO2 WITH GE CONTENT IN THE POLY SIGE FILMS
PHYSICAL AND ELECTRICAL CHARACTERISTICS OF ZRO2 THIN FILMS AS A PROMISING GATE DIELECTRICS
E-MRS SPRING MEETING 2002
PHYSICAL AND ELECTRICAL DEGRADATION OF ZRO2 THIN FILMS UPON VARIOUS GATE ELECTRODES MATERIALS
HIGH QUALITY HFO2 GATE DIELECTRICS DEPOSITED BY REACTIVE SPUTTERING WITH TOX<10