발행물
컨퍼런스
한국재료학회 추계학술대회
2024.11
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Atomic Layer Deposited InGaZnOx Thin-Film Transistors for Low Subthreshold Swing and High Mobility
Defect Engineering via Sputtering in Non-volatile Antiferroelectric HfxZr1-xO₂ Thin Films for Low-power, Highendurance
Crystallographically Controlled N-Terminated (111)-Textured TiN Electrodes for Enhanced Low-Voltage Switching (0.8 V) in Ferroelectric Hf0.5Zr0.5O2 Capacitors
대한금속재료학회 추계학술대회
2024.10
Effect of Nitrogen Atom Doping on Molybdenum Electrode for Enhancing the Reliability of Hf0.5Zr0.5O2 Ferroelectric Capacitors
Demonstration of wake-up free and high endurance (~10 10 cycles) Hf0.5Zr0.5O2 thin film via alloy electrodes