발행물
컨퍼런스
The Korean Conference on Semiconductors (KCS) 2025
2014
,
Application of the JMAK model for crystallization behavior in ferroelectric ALD-(Hf,Zr)O2 thin films
A study on wafer-scale characterization of ALD-HZO thin films using a combinatorial approach
The Korean Institute of Electrical and Electronic Material Engineers (KIEEME) 2024
2001
Comprehensive study on the effect of compositional variation in single HfXZr1-XO2 thin films
Atomic Layer Deposition (ALD) 2024
2007
Atomic layer deposition of niobium oxide using (tertbutylimido)tris(diethylamino)niobium and anhydrous hydrogen peroxide for ferroelectric hafnia applications
In-situ FTIR study of oxygen source mixing for hafnium oxide atomic layer deposition on titanium nitride