발행물
컨퍼런스
Atomic Layer Deposition (ALD) 2023
2026
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The impact of oxygen source on the formation of TiN interface at the initial stage ALD process of hafnia-based ferroelectrics: an in-situ analysis
Influence of oxygen source on ferroelectricity of ALD-Hf0.5Zr0.5O2 thin films with and without capping layer
Impact of oxygen source and cocktail precursor on ferroelectricity of ALD HfXZr1-XO2 thin films
The Korean Institute of Electrical and Electronic Material Engineers (KIEEME) 2023
2023
A study on the ferroelectric properties of (Hf,Zr)O2 thin films using various annealing methods
A study on cryogenic characterization of ferroelectric (Hf,Zr)O2 thin films