발행물
컨퍼런스
Nano Korea 2024
2005
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Scaling of operating voltage of HZO ferroelectric capacitors for low power nonvolatile memory applications
The Korean Institute of Electrical and Electronic Material Engineers (KIEEME) 2024
2026
A study on low-temperature (<400℃) process of ferroelectric (Hf,Zr)O2 thin films using H2O2 as oxygen source
High-k ALD-(Hf,Zr)O2 thin films with morphotropic phase boundary toward next-generation DRAM technology
Cryogenic characterization of ferroelectric (Hf,Zr)O2 thin films sandwiched between TiN or W electrodes
A study on crystallization behaviors of low-temperature (<400℃) ferroelectric (Hf,Zr)O2 thin films using JMAK model